Sina Silicon Carbide Coating, Tantalum Carbide Coating, Praecipua Graphite Manufacturer, Supplier, Factory

Tantalum Carbide Coating

VeTek semiconductor est primarius fabricae Tantali Carbide Coating materias semiconductoris industriae. Nostrae oblationes principales productae includunt partes CVD tantalum carbidam coating partes, sintedi TaC partes efficiens pro cristallo augmenti SiC vel epitaxiae semiconductoris. Transierunt ISO9001, VeTek Semiconductor bonam potestatem in qualitate habet. VeTek Semiconductor dicatus est ut innovator factus sit in Tantalum Carbide Coating industriam per permanentem inquisitionem et progressionem technologiarum iterativarum.

Pelagus products suntTantalum Carbide vestiens defector anulus, TaC obductis diuersionis anulus, TaC dimidiatae partes lunae, Tantalum Carbide Coated rotationis Orbis Planetariae (Aixtron G10), TaC Crucible Coated; TaC Coated Annulos; TaC Coated Porous Graphite; Tantalum Carbide Coating Graphite Susceptor; TaC Coated Guide Ring; TaC Tantalum Carbide Coated Plate; TaC Coated Wafer Susceptor; TaC Coating Ring; TaC Coating Graphite Cover; TaC Coated Chunketc., puritas est infra 5ppm, occurrere mos requisitis.

TaC graphite coating creatum est superficies graphitae altae puritatis substratae cum strato subtilissimo carbidi tantali per Depositionis Vaporis chemici proprietatis (CVD) processum. Commodum infra picturam ostenditur:

Excellent properties of TaC coating graphite

Tantalum carbide (TaC) efficiens attentionem consecuta est ob altitudinem eius liquescentis punctum usque ad 3880°C, excellentem roboris mechanicam, duritiem et resistentiam ad pulsuum thermarum, idque amabili modo ad compositiones semiconductoris epitaxy processuum cum temperatura superiori requisitis; ut Aixtron MOCVD systema et LPE SiC processum epitaxy. Etiam late patet in PVT methodo SiC processum cristallinum.

Key Features:

●Temperatus stabilitas

●Ultra alta munditia

●Resistentia ad H2, NH3, SiH4, Si

●Resistentia ad scelerisque stirpe

●Fortis adhaesio graphite

●Conformal coating coverage

● Magnitudo usque ad 750 mm diameter (Sola fabrica in Sinis hanc magnitudinem attingit)

Applications:

●Azymum carrier

calefactio inductiva susceptor

calefactio elementum resistens

●Satellite orbis

●imber caput

●dux anulus

●LED Epi susceptor

●COLLUM iniectio

●Masking anulum

Calor scutum

Tantalum carbide (TaC) efficiens microscopic cross-sectioni:

the microscopic cross-section of Tantalum carbide (TaC) coating

Parameter VeTek Semiconductor Tantalum Carbide Coating:

Corporalis proprietatibus TaC coating
Density	14.3 (g/cm³)
Imprimis emissivity	0.3
Scelerisque expansion coefficientes	6.3 10^-6/K
Duritia (HK)	2000 HK
Resistentia	1×10^-5Ohm* cm
Scelerisque status	<2500℃
Graphite magnitudine mutationes	-10~-20um
Crassitudo coating	≥20um valorem typicum (35um±10um)

TaC coating EDX data：

EDX data of TaC coating

TaC efficiens crystal structuram data:

Elementum	Cento atomicus
	Pt. 1	Pt. 2	Pt. 3	Mediocris
C K	52.10	57.41	52.37	53.96
The M	47.90	42.59	47.63	46.04

TaC Coating Chuck TaC Coating Planetary Orbis TaC Coated Plate TaC Coating Rotatione Plate TaC coating susceptor CVD TaC coating Cover CVD TaC Coating Ringo TaC Coating Plate

Pii Carbide Coating

VeTek Semiconductor speciale in productione ultra purum Siliconis Carbide productorum Coating, hae tunicae ad graphites, ceramicos et metalla refractoria applicanda destinantur.

Nostrae puritatis altae coatinges praesertim in usu in semiconductoribus et in industriis electronicis iaculis sunt. Pro tutelae laganum baiulum, susceptores et elementa calefacientia inserviunt, ea custodiendo a ambitus mordax et reactiva, quae in processibus occurrunt, ut MOCVD et EPI. Hi processus integrales sunt processus lagani et fabrica fabricandi. Accedit, nostrae membranae aptae sunt applicationibus in fornacibus vacuo et calefactione exempli, ubi summus vacuum, reactivum et oxygenii ambitus offendit.

In VeTek Semiconductor, solutionem comprehensivam offerimus cum facultatibus machinarum machinarum provectorum. Hoc efficit ut basium componentium utentes graphite, ceramico, vel refractariis metallis fabricare, ac ceramicam SiC vel TaC coatings in aedibus adhibere possimus. Etiam operas efficiens praebemus ad partes suppeditatas, ut flexibilitas ad diversas necessitates occurrat.

Nostri Silicon Carbide Productorum Coating late usi sunt in epitaxy Si, epitaxy SiC, systema MOCVD, RTP/RTA processus, processus engraving, processus ICP/PSS engraving, processus variarum LED generum, inter caeruleum et viridem LED, UV LED et profunde UV DUXERIT etc., quod aptatur instrumentis ex LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI et sic porro.

Reactorium partes facere possumus;

Pii Carbide Coing multa singularia commoda:

Silicon Carbide Coating several unique advantages

VeTek Semiconductor Silicon Carbide Coating Parameter:

Basicae physicae proprietates CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β Phase polycrystallina, maxime (111) ordinatur
Densitas	3.21 g/cm³
duritia	MMD Vickers duritiem 500g onus
Frumenti amplitudo	2~10μm
Puritas chemica	99.99995%
Calor Capacity	640 J·kg-1·K-1
Sublimatio Temperature	2700℃
Flexurae Fortitudo	415 MPa RT 4-punctum
Modulus	430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity	300W·m-1·K-1
Scelerisque Expansion (CTE)	4.5×10-6K-1

SEM data and structure of CVD SIC films

Wafer

Azymum Substratumest laganum e semiconductore unius materiae cristallinae factum. Subiectum laganum processus fabricandi directe ingredi potest ad machinas semiconductores producendas, vel per processum epitaxialem procedendum ad lagana epitaxialem producendum.

Wafer Substratum, ut structuram semiconductoris machinarum fundamentalem sustinens, machinis effectionem et stabilitatem directe afficit. Sicut "fundamentum" pro fabrica fabricandi semiconductor, series processus faciendi sicut incrementum cinematographicum tenue et lithographia opus est ut in subiecto peragatur.

Genera subiecti:

●Unius crystalli silicon laganum: nunc frequentissima materia subiecta, late usus in circuitibus fabricandis (ICs), microprocessores, memorias, cogitationes MEMS, machinis potentiae, etc.;

●SOI subiecti: usus pro summus perficientur, humilis-virtutis ambitus integratus, ut summus frequentia analogorum et circuitus digitales, RF cogitationes et administrationes potentiae astulae;

●Compositum semiconductor substratum: Gallium arsenide substratum (GaAs): proin et millimetre unda machinarum communicationis, etc. Gallium nitride substrata (GaN): pro RF potentia amplificatoria, HEMT, etc.Pii carbide distent (SiC): usus pro vehiculis electricis, conversis potentiae aliisque machinationibus phosphidi substrati Indium potentiae (InP): adhibitis pro lasers, photodetectoribus, etc.;

●Sapphirus distent: usus ad fabricam LED, RFIC (circuitus frequentiae radiophonicae integralis), etc.;

Vetek Semiconductor professio est Substratum SiC et SOI substratum in Sinis elit. Our4H semi-genus insulating SiC subiectaet4H Semi Insulating Type SiC Substratelate in instrumentis clavibus semiconductor fabricandis apparatibus.

Vetek Semiconductor committitur ut provectae et customizable Wafer Substrata producta et solutiones technicas variarum specificationum pro industria semiconductoris committatur. Sincere nos expectamus elit in Sina becoming tuum.

ALD

Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).

Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.

Atomic layer deposition process:

Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.

Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.

Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.

1st Half-Cycle Purge 2nd Half-Cycle Purge

Highlights of Atomic Layer Deposition (ALD):

1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes

Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.

Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:

PVD technology	CVD technology	ALD technology
Faster deposition rate	Average deposition rate	Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision	Medium film thickness (depends on the number of reaction cycles)	Atomic-level film thickness
The coating has a single directionality	The coating has a single directionality	Good uniformity of large-area film thickness
Poor thickness uniformity	Average step coverage	Best step coverage
Poor step coverage	\	Dense film without pinholes

Advantages of ALD technology compared to CVD technology (Source: ASM)

Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.