Aixtron G5 MOCVD Susceptores

VeTek Semiconductor principalis Aixtron G5 MOCVD Susceptores opificem et innovatorem in China. Propria materia in SiC efficiens multos annos habemus. Aixtron G5 MOCVD Susceptores Aixtron G5 MOCVD reactor specialiter destinati offerimus. Hoc ornamentum Aixtron G5 MOCVD Susceptores versatile et efficax solutio est fabricandi semiconductoris cum optimali magnitudine, compatibilitate et magna productivity. Gratum est nobis quaerere.

Mitte Inquisitionem

depictio producti

Cum fabrica professionalis, VeTek Semiconductor similis est tibi Praestare Susceptores Aixtron G5 MOCVD Axtron Epitaxy, epi susceptor,Sic iactaretpartes graphite;TaC iactaretpartes graphitae, solidae SiC/CVD SiC;Vicus partes.Grata est nobis quaerenda.

Aixtron G5 est depositio systematis semiconductorum compositorum. AIX G5 MOCVD utitur ad productionem emptoris AIXTRON probatam tribunal reactor planetarii cum cartridge automated plene (C2C) laganum systematis translationis. Industria maxima effecta est magnitudine unius cavitatis (8 x 6 dig) et capacitatis productionis maximae. Flexibiles 6 - et 4 inch figurationes praebet ad productionem minimizes impensas dispositas, servato excellentia producti qualitatis. Murus calidus, systema planetarium CVD incrementum multiplex laminarum in uno fornace distinctum est, et efficientia alta est output.

VeTek Semiconductor praebet integram accessionem pro Aixtron G5 MOCVD Systematis Susceptoris Aquisgranensis G5+systema, Aixtron G5 MOCVD Susceptores in his accessoriis constant;

Mitte Piece, Anti-Rotate	Distributio Ring	Tectum	Holder, Teiling, Insulated	Operculum Plate, exterioris
Cover Plate, Inner	Operculum Ring	Disc	Pulldown Cover Disc	Pin
Pin-washer	Disc planetarium	Collector Inlet Ring Gap	Exhauriunt Collector Superioris	Lorem
Supporting Ring	Support Tube

Aixtron G5 MOCVD Susceptor

CVD SiC Crystal Structure film:

CVD SIC FILM CRASTAL STRUCTURE

Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β Phase polycrystallina, maxime (111) ordinatur
Densitas	3.21 g/cm³
duritia	MMD Vickers duritiem 500g onus
Frumenti amplitudo	2~10μm
Puritas chemica	99.99995%
Calor Capacitas	640 J·kg^-1·K^-1
Sublimatio Temperature	2700℃
Flexurae Fortitudo	415 MPa RT 4-punctum
Modulus	430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity	300W·m^-1·K^-1
Scelerisque Expansion (CTE)	4.5×10^-6·K^-1