VeTek Semiconductor principalis Aixtron G5 MOCVD Susceptores opificem et innovatorem in China. Propria materia in SiC efficiens multos annos habemus. Aixtron G5 MOCVD Susceptores Aixtron G5 MOCVD reactor specialiter destinati offerimus. Hoc ornamentum Aixtron G5 MOCVD Susceptores versatile et efficax solutio est fabricandi semiconductoris cum optimali magnitudine, compatibilitate et magna productivity. Gratum est nobis quaerere.
Cum fabrica professionalis, VeTek Semiconductor similis est tibi Praestare Susceptores Aixtron G5 MOCVD Axtron Epitaxy, epi susceptor,Sic iactaretpartes graphite;TaC iactaretpartes graphitae, solidae SiC/CVD SiC;Vicus partes.Grata est nobis quaerenda.
Aixtron G5 est depositio systematis semiconductorum compositorum. AIX G5 MOCVD utitur ad productionem emptoris AIXTRON probatam tribunal reactor planetarii cum cartridge automated plene (C2C) laganum systematis translationis. Industria maxima effecta est magnitudine unius cavitatis (8 x 6 dig) et capacitatis productionis maximae. Flexibiles 6 - et 4 inch figurationes praebet ad productionem minimizes impensas dispositas, servato excellentia producti qualitatis. Murus calidus, systema planetarium CVD incrementum multiplex laminarum in uno fornace distinctum est, et efficientia alta est output.
VeTek Semiconductor praebet integram accessionem pro Aixtron G5 MOCVD Systematis Susceptoris Aquisgranensis G5+systema, Aixtron G5 MOCVD Susceptores in his accessoriis constant;
Mitte Piece, Anti-Rotate | Distributio Ring | Tectum | Holder, Teiling, Insulated | Operculum Plate, exterioris |
Cover Plate, Inner | Operculum Ring | Disc | Pulldown Cover Disc | Pin |
Pin-washer | Disc planetarium | Collector Inlet Ring Gap | Exhauriunt Collector Superioris | Lorem |
Supporting Ring | Support Tube |
Basicae physicae proprietates CVD SiC efficiens:
Basicae physicae proprietates CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β Phase polycrystallina, maxime (111) ordinatur |
Densitas | 3.21 g/cm³ |
duritia | MMD Vickers duritiem 500g onus |
Frumenti amplitudo | 2~10μm |
Puritas chemica | 99.99995% |
Calor Capacitas | 640 J·kg-1·K-1 |
Sublimatio Temperature | 2700℃ |
Flexurae Fortitudo | 415 MPa RT 4-punctum |
Modulus | 430 Gpa 4pt bend, 1300℃ |
Scelerisque Conductivity | 300W·m-1·K-1 |
Scelerisque Expansion (CTE) | 4.5×10-6·K-1 |