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SiC Coated Ferocactus Susceptor pro LPE PE2061S'
  • SiC Coated Ferocactus Susceptor pro LPE PE2061S'SiC Coated Ferocactus Susceptor pro LPE PE2061S'

SiC Coated Ferocactus Susceptor pro LPE PE2061S'

VeTek Semiconductor princeps SiC Coated Barrel Susceptor LPE PE2061S fabricator et innovator in China. Proprium in materia SiC coating nos per multos annos offerimus. Dolium susceptorem SiC coated susceptorem LPE PE2061S 4'' lagana specialiter designatum praebemus. Haec susceptoris lineamenta durabilem siliconis carbidam efficiunt quae in LPE (Liquid Phase Epitaxy) processum auget ac diuturnitatem.

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depictio producti


VeTek Semiconductor Sinarum SiC Coated Ferocactus Susceptor estLPE PE2061Sfabrica et elit.

VeTeK dolium semiconductorem SiC bituminatum susceptorem pro LPE PE2061S productum est summus effectus applicando carbidi pii in superficie graphite isotropici valde purgati. Hoc fit per VeTeK semiconductoris proprietatisVapor chemicus Depositio (CVD)processum.

Nostrum SiC Coated Barrel Susceptor pro LPE PE2061S est genus depositionis CVD dolii reactor epitaxialis destinatur ad certam observantiam in extremis ambitibus liberandam. Eius adhaesio coatingis eximia, resistentia oxidationis summus temperatura, et resistentia corrosio optimam electionem usui duris conditionibus faciunt. Accedit, eius profile uniformis scelerisque et laminae gasi fluunt exemplaris contagione ne contagione, altum quale incrementum epitaxiale obtineant.

Dolium informe semiconductoris nostriepitaxial reactoroptimizes laminae gasi exemplaria fluunt, uniformis caloris distributio procurans. Hoc iuvat ne contagione vel diffusio aliqua immunditiarum fiat;summus qualitas incrementum epitaxial super laganum subiecta.

Nos dediti sumus clientibus nostris praebere qualitatem, sumptus efficens productos. Noster CVD SiC obductis Barrel Susceptor commodum offert certae pretii, servato excellenti densitate pro utroquegraphite subiectietPii carbide coatingfirmam tutelam praebens in ambitibus summus temperatus et mordax operandi.


SEM DATA CVD SIC CRYSTALLI STRUCTURA cinematographica:

CVD SIC FILM CRYSTAL STRUCTURE


Dolium SiC iactaret susceptorem unius cristalli incrementi ostendit altissimam superficiei lenitatem.

Minimizet differentiam scelerisque expansionem coefficiens inter graphite subiectum et

Pii carbide efficiens, efficaciter compagem vi emendans et crepuit et delaminationem praeveniens.

Ambo graphite substrato et carbido pii intexto altam habent facultatem conductivity scelerisque et scelerisque distribuendi optimam facultatem.

Altum liquescens punctum habet, summus temperatusoxidatio resistentiaetcorrosio resistentia.



Basicae physicae proprietates CVD SiC coating:

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3.21 g/cm³
duritia MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1


VeTek Semiconductor SiC Coated Barrel Susceptor pro LPE PE2061S Production Shop:

SiC Coated Barrel Susceptor for LPE PE2061S Production Shop


Overview of the semiconductor chip epitaxy industry catena:

semiconductor chip epitaxy industry chain


Hot Tags: SiC Coated Ferocactus Susceptor pro LPE PE2061S, China, Manufacturer, Supplier, Factory, Lorem, Eme, Provecta, Dura, Factus in Sinis
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