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Sinae Tantalum Carbide Coating fabrica, supplementum, Factory

VeTek semiconductor est primarius fabricae Tantali Carbide Coating materias semiconductoris industriae. Nostrae oblationes principales productae includunt partes CVD tantalum carbidam coating partes, sintedi TaC partes efficiens pro cristallo augmenti SiC vel epitaxiae semiconductoris. Transierunt ISO9001, VeTek Semiconductor bonam potestatem in qualitate habet. VeTek Semiconductor dicatus est ut innovator factus sit in Tantalum Carbide Coating industriam per permanentem inquisitionem et progressionem technologiarum iterativarum.


Pelagus products suntTantalum Carbide vestiens defector anulus, TaC obductis diuersionis anulus, TaC dimidiatae partes lunae, Tantalum Carbide Coated rotationis Orbis Planetariae (Aixtron G10), TaC Crucible Coated; TaC Coated Annulos; TaC Coated Porous Graphite; Tantalum Carbide Coating Graphite Susceptor; TaC Coated Guide Ring; TaC Tantalum Carbide Coated Plate; TaC Coated Wafer Susceptor; TaC Coating Ring; TaC Coating Graphite Cover; TaC Coated Chunketc., puritas est infra 5ppm, occurrere mos requisitis.


TaC graphite coating creatum est superficies graphitae altae puritatis substratae cum strato subtilissimo carbidi tantali per Depositionis Vaporis chemici proprietatis (CVD) processum. Commodum infra picturam ostenditur:


Excellent properties of TaC coating graphite


Tantalum carbide (TaC) efficiens attentionem consecuta est ob altitudinem eius liquescentis punctum usque ad 3880°C, excellentem roboris mechanicam, duritiem et resistentiam ad pulsuum thermarum, idque amabili modo ad compositiones semiconductoris epitaxy processuum cum temperatura superiori requisitis; ut Aixtron MOCVD systema et LPE SiC processum epitaxy. Etiam late patet in PVT methodo SiC processum cristallinum.


Key Features:

 ●Temperatus stabilitas

 ●Ultra alta munditia

 ●Resistentia ad H2, NH3, SiH4, Si

 ●Resistentia ad scelerisque stirpe

 ●Fortis adhaesio graphite

 ●Conformal coating coverage

 Magnitudo usque ad 750 mm diameter (Sola fabrica in Sinis hanc magnitudinem attingit)


Applications:

 ●Azymum carrier

 calefactio inductiva susceptor

 calefactio elementum resistens

 ●Satellite orbis

 ●imber caput

 ●dux anulus

 ●LED Epi susceptor

 ●COLLUM iniectio

 ●Masking anulum

 Calor scutum


Tantalum carbide (TaC) efficiens microscopic cross-sectioni:


the microscopic cross-section of Tantalum carbide (TaC) coating


Parameter VeTek Semiconductor Tantalum Carbide Coating:

Corporalis proprietatibus TaC coating
Density 14.3 (g/cm³)
Imprimis emissivity 0.3
Scelerisque expansion coefficientes 6.3 10-6/K
Duritia (HK) 2000 HK
Resistentia 1×10-5Ohm* cm
Scelerisque status <2500℃
Graphite magnitudine mutationes -10~-20um
Crassitudo coating ≥20um valorem typicum (35um±10um)


TaC coating EDX data

EDX data of TaC coating


TaC efficiens crystal structuram data:

Elementum Cento atomicus
Pt. 1 Pt. 2 Pt. 3 Mediocris
C K 52.10 57.41 52.37 53.96
The M 47.90 42.59 47.63 46.04


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Tantalum Carbide Ring

Tantalum Carbide Ring

Cum professionalis innovator et dux Tantalum Carbide Coated Ring products in Sina, VeTek semiconductor Tantalum Carbide Coated Ring munus irreparabile ludit in crystallo SiC incrementum cum excellentia sua caliditas resistentia, resistentia et optima scelerisque conductivity gerunt. Excipe ulteriorem consultationem tuam.

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Porous Tantalum Carbide

Porous Tantalum Carbide

VeTek Semiconductor fabricator professionalis et dux Porous Tantalum Carbide productorum in Sinis est. Porosum Tantalum Carbide fabricari solet per modum depositionis chemicae vaporis (CVD) methodi, quae accuratam sui magnitudinem et distributionem moderatur, et instrumentum materiale in ambitus extremae caliditatis caliditatis dicatum est. Excipe ulteriorem consultationem tuam.

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Tantalum Carbide Ring

Tantalum Carbide Ring

Provectus opifex et productor Tantalum Carbide Ring producta in Sinis, VeTek Semiconductor Tantalum Carbide Ring summa duritiem habet, gerunt resistentiam, resistentiam caliditas et stabilitatem chemicam, et late in agro semiconductore fabricando adhibetur. Praesertim in CVD, PVD, ion processus implantationis, processus etching, et laganum processui et vecturae, necesse est productum pro processus semiconductoris et fabricandi. Tuam porro consultationem exspecto.

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Tantalum Carbide Coating Support

Tantalum Carbide Coating Support

Pro professionalis Tantalum Carbide Coating Support producti opificem et officinam in Sinis, VeTek Semiconductor Tantalum Carbide Coating Support adhiberi solet pro superficiei structurarum partium structurarum seu subsidiorum componentium in instrumento semiconductoris, praesertim pro superficiali tutela instrumentorum clavium in semiconductoribus processuum fabricandis sicut CVD PVD. Excipe ulteriorem consultationem tuam.

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Tantalum Carbide Guide Ring

Tantalum Carbide Guide Ring

VeTek Semiconductor fabricator professionalis et dux Tantalum Carbide Guida Ringi producta in Sinis est. Nostra Tantalum Carbide (TaC) Guide Ring est summus anulus faciendi componentis carbide tantalum facta, quae vulgo in instrumento processus semiconductoris adhibetur, praesertim in ambitus summus temperatus et valde corrosivus ut CVD, PVD, engraving et diffusio. VeTek Semiconductor committitur ad technologiam provectam et ad solutiones productorum pro semiconductoris industriae providendis, et tuas ulteriores inquisitiones recipit.

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TaC Coating Rotatione Susceptor

TaC Coating Rotatione Susceptor

Ut professionalis fabrica, innovator et dux TaC Coating Susceptor productos in Sinis. VeTek Semiconductor TaC Coating Rotatione Susceptor plerumque inauguratus est in depositione chemicis vaporis (CVD) et trabis hypotheticis epitaxy (MBE) instrumento ad lagana sustinenda et rotata ut depositio uniformis materiae et reactionis efficientis curet. Clavis est componentis in processus semiconductoris. Excipe ulteriorem consultationem tuam.

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Pro professionalis Tantalum Carbide Coating fabrica et elit in Sinis, habemus officinam nostram. Utrum officia nativus ad proprias regionis tuae necessitates occurrere vel in Tantalum Carbide Coating in Sinis factas et longas emere voles, nuntium nobis relinquere potes.
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