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Sinae Sic Epitaxy Processus fabrica, supplementum, Factory

VeTek Semiconductor unica carbida tunicarum superiorum tutelam partium graphitarum in Processu SiC Epitaxy praebent pro processu exigendi materias semiconductores et compositas semiconductores. Effectus graphite extenditur ad vitam componentem, conservationem reactionis stoichiometriae, inhibitionis immunditiae migrationis ad epitaxiam et cristallum applicationum incrementum, inde in aucta cede et qualitate.

Nostra tantalum carbida (TaC) coatings fornacem criticam et reactorem partium in calidis calidis (usque ad 2200°C) custodiunt, ab ammoniacis calidis, hydrogenii, vaporibus et metallis liquefactis. VeTek Semiconductor amplis graphite processui et mensurae facultates habet ad occursum tuum requisitis nativus, ut mercedem fucatam vel plenam servitutem offerre possimus, cum machinarum peritiarum turma nostra parata est ad solutionem rectam pro te ac applicatione tua specifica. .

Compone semiconductor crystallorum

VeTek Semiconductor specialem TaC coatings variis componentibus et vectoribus praebere potest. Per VeTek Semiconductoris industriam efficiens processum ducens, TaC coating potest altam puritatem, caliditatem stabilitatem et altam chemicam resistentiam obtinere, ita productum qualitatem crystalli TaC/GaN) et EPl stratis emendans, et vitam reactoris criticae componentium amplificans.

Scelerisque insulators

SiC, GaN et AlN cristallum incrementum componentium cum vasculis, seminibus detentoribus, deflectentibus et sparguntur. Congregationes industriales inter elementa calefacientia resistentia, nozzles, annulos protegentes et adfixa aerea, GaN et SiC epitaxiales CVD reactor componentes inter laganum baiulum, scuta satelles, capita imbres, pileos et bases, MOCVD composita.


Propositum:

DUXERIT (Lux Emittens Diode) Wafer Portitorem

ALD(Semiconductor) Susceptor

EPI Susceptor(SiC Epitaxy Process)


Comparatio SiC Coating et TaC Coating:

Sic Tac
Marisque Ultra puritatem, Excellens Plasma resistentia Excellent caliditas stabilitatis (conformantia processus caliditas)
Puritas >99.9999% >99.9999%
Densitas (g/cm III) 3.21 15
Duritia (kg/mm ​​2) 2900-3300 6.7-7.2
Resistentia [Ωcm] 0.1-15,000 <1
Scelerisque conductivity (W/m-K) 200-360 22
Coefficiens expansio scelerisque (10-6/) 4.5-5 6.3
Applicationem Semiconductor Equipment Ceramic fig (Focus Ring, Shower Head, Dummy Wafer) SiC Unius crystalli incrementum, Epi, UV partes DUXERIT Equipment


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Pro professionalis Sic Epitaxy Processus fabrica et elit in Sinis, habemus officinam nostram. Utrum officia nativus ad proprias regionis tuae necessitates occurrere vel in Sic Epitaxy Processus in Sinis factas et longas emere voles, nuntium nobis relinquere potes.
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