SiC Coated Graphite Susceptor pro MOCVD

VeTek Semiconductor primarius est fabrica et supplementum Graphite SiC Coated Susceptoris pro MOCVD in Sinis, specialiter in applicationibus coatingis et semiconductoris epitaxialis productorum ad semiconductoris industriam. Nostri MOCVD SiC susceptores graphitici obductis qualitatem competitive et pretium offerunt, mercatus servientes per Europam et Americam. Commissi sumus ut tuum diuturnum tempus, in semiconductor vestibulum proficientis socium confideret.

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VeTek Semiconductor's SiC Coated Graphite Susceptor pro MOCVD est summus puritas SiC tabellarius graphiticus obductis, specialiter destinatus pro incremento epitaxial iacuit in lagano xxxiii. Ut elementum centrale in MOCVD processui, calces vel anulus figuratus typice, eximii caloris resistentia et corrosio resistentia gloriatur, stabilitatem in extremis ambitibus procurans.

Key Features MOCVD SiC Coated Graphite Susceptor:

● Flake-Resistentes Coating: Curat in omnibus superficiebus aequabile SiC coating coverage, reducendo periculum particulae elongationis

● Praeclara Oxidationis High-Temperate Resistance: stabilis temperaturis usque ad MDC ° C *

● High Munditia: fabricari per CVD depositionem vaporis chemici, conditionibus chlorinationi aptam

● Corrosio Superioris Resistentia: Acida, alkalis, salia, et reagentia organica valde repugnant

● Optimized Laminar Airflow Pattern: Accommodat uniformitatem dynamicorum editi

● Uniform Thermal Distribution: Firmum calorem efficit distributione in processibus summus temperatus

Contamination praeventionis, contaminantium vel immunditiarum diffusionem prohibet, azyma cursus munditia

In VeTek Semiconductor, strictis qualitatis signis adhaeremus, certas fructus et officia clientibus nostris tradens. Solas materias premiums eligimus, ad industriam perficiendi requisita industriam occurrere et superare contendentes. Noster SiC Coated Graphite Susceptor pro MOCVD exemplificat hanc obligationem qualitatis. Contactus nos ut plura discamus quomodo semiconductorem lagani processus necessitates tuas sustinere possimus.

CVD SIC CRUSTALLUM MOMENTUM STRUCTURA:

SEM DATA OF CVD SIC FILM

Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β Phase polycrystallina, maxime (111) ordinatur
Density	3.21 g/cm³
duritia	MMD Vickers duritiem 500g onus
Frumenti Size	2~10μm
Puritas chemica	99.99995%
Calor Capacity	640 J·kg^-1·K^-1
Sublimatio Temperature	2700℃
Flexurae Fortitudo	415 MPa RT 4-punctum
Modulus	430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity	300W·m^-1·K^-1
Scelerisque Expansion (CTE)	4.5×10^-6K^-1