Plus purus Graphite inferior Halfmoon

VeTek Semiconductor primarius est supplementum nativus Ultra Pure Graphite Inferioris Halfmoon in Sinis, specialiter in materiis provectis per multos annos. Our Ultra Pure Graphite Lower Halfmoon is specifically designed for SiC epitaxial equipment, efficiendi praestans praestans. Factus ex graphite ultra-puro importato, firmitatem et vetustatem praebet. Visita officinam nostram in Sinis ad explorandum qualitatem nostram GENERALIS Ultra Pure Graphite Inferioris Halfmoon Primae manus.

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VeTek semiconductor est fabricator professionalis dedicatus ad dimidiam partem inferiorem Ultra Pure Graphite comparandam. Our products Ultra Pure Graphite Lower Halfmoon are specifically designed for SiC epitaxial rooms and offer superior performance and compatibility with various equipment exempla.

Features:

Connection: VeTek Semiconductor Ultra Pure Graphite Inferior Halfmoon designatus est coniungere cum vicus tubulis, quo facilius gas fluxum ferebat ad basim ferebat rotationem pellere.

Temperature Imperium: Productum temperaturae imperium concedit, optimas conditiones in cubiculi reactionis procurans.

Non-Contactus Design: intra reactionem cubiculi nostri Installed, Halfmoon Inferioris Pure Graphite nostri Ultra lagana non directe contactum, integritatem processus procurans.

Application varius:

Our Ultra Pure Graphite Inferior Halfmoon inservit criticae componentis in cubiculis epitaxialibus SiC, ubi iuvat continentiam immunditiam infra 5 ppm ponere. In parametris arcte vigilantia, sicut crassitudo et aequalitas concentratio doping, nos curemus stratis epitaxialibus summa qualitate.

Compatibilitas:

VeTek Semiconductor's Ultra Pure Graphite Inferioris Halfmoon compatitur cum amplis instrumentis exemplaribus, in quibus LPE, NAURA, JSG, CETC, NASO TECH, et sic porro.

Invitamus te ad officinam nostram in Sinis visitare ad explorandum qualitatem nostram summus Ultra Pure Graphite Inferioris Halfmoon.

Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β Phase polycrystallina, maxime (111) ordinatur
Density	3.21 g/cm³
duritia	MMD Vickers duritiem 500g onus
Frumenti amplitudo	2~10μm
Puritas chemica	99.99995%
Calor Capacity	640 J·kg-1·K-1
Sublimatio Temperature	2700℃
Flexurae Fortitudo	415 MPa RT 4-punctum
Modulus	430 Gpa 4pt bend, 1300℃
Scelerisque conductivity	300W·m-1·K-1
Scelerisque Expansion (CTE)	4.5×10-6K-1