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Superius Halfmoon SiC Coated
  • Superius Halfmoon SiC CoatedSuperius Halfmoon SiC Coated
  • Superius Halfmoon SiC CoatedSuperius Halfmoon SiC Coated
  • Superius Halfmoon SiC CoatedSuperius Halfmoon SiC Coated
  • Superius Halfmoon SiC CoatedSuperius Halfmoon SiC Coated

Superius Halfmoon SiC Coated

VeTek Semiconductor primarius est elit semismoon Superioris Partis SiC in Sinis custatam, specialiter in provectis materiis plus XX annis. VeTek Semiconductor Halfmoon Superioris Part SiC obductis specialiter destinatur pro instrumento epitaxiali SiC, inserviens cruciali componenti in camera reactionis. Factus e ultra-puro, semiconductor-gradus graphite, optimum effectum praestat. Te invitamus ut officinas nostras in Sinis visitare.

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Ut opificem professionalem, volumus tibi praebere altam qualitatem Halfmoon Superioris Partis SiC obductis.

VeTek Semiconductor Halfmoon Superioris Part SiC obductis specialiter designatae sunt pro camera epitaxiali SiC. Amplis applicationibus habent et compatiuntur variis instrumentorum exemplaribus.

Application varius:

In VeTek Semiconductor, Lorem in fabricandis qualitatem superiorem Halfmoon Partis SiC obductis. Nostri SiC et TaC producta obductis specialiter destinata sunt pro cubiculis epitaxialibus SiC et latas offerunt compatibilitatem cum exemplaribus diversis instrumentis.

VeTek Semiconductor Halfmoon Superioris Pars SiC obductis inservit componentibus in thalamo SiC epitaxiali. Condiciones temperaturas moderatas curant et contactum cum laganis indirectum servantes immunditiam contentam infra 5 ppm.

Ut meliorem epitaxialem iacuit qualitatem curet, diligenter parametros criticos admonemus ut crassitudo et aequalitas concentratio doping. Taxatio nostra includit crassitudinem cinematographicam analysandam, tabellarium intentionem, uniformitatem, asperitatem superficiei datas ad consequendum optimum productum qualitatem.

VeTek Semiconductor Halfmoon Superioris Part SiC obducta compatitur variis instrumentis exemplaribus, in quibus LPE, NAURA, JSG, CETC, NASO TECH, et plura.

Contactus nos hodie ad explorandum superiores Halfmoon Partes SiC superiores qualitates nostras vel officinas visitare obductis.


Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3.21 g/cm³
duritia MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1



VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry catena:


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