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SiC Coated Ferocactus Susceptor
  • SiC Coated Ferocactus SusceptorSiC Coated Ferocactus Susceptor
  • SiC Coated Ferocactus SusceptorSiC Coated Ferocactus Susceptor

SiC Coated Ferocactus Susceptor

VeTek Semiconductor praebet solutiones comprehensivas solutionum componentium pro LPE silicon epitaxy reactionis cubicula liberans longam restem, qualitatem stabilem, et stratum epitaxialem melius cedit. Our product such as SiC Coated Barrel Susceptor positionis feedback ex clientibus accepit. Etiam subsidia technica pro Si Epi, SiC Epi, MOCVD, UV Epitaxiae praebemus, et plura. Liberum inquirere ad Morbi cursus sapien.

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VeTek Semiconductor Sinarum princeps SiC efficiens et TaC fabricans opificem, supplementum et exportatorem. Inhaerentes studio perfectae qualitatis productorum, ut noster Barrel Susceptor SiC Coated multis clientibus satisfactus sit. Extremum consilium, materias rudis qualitas, princeps effectus ac pretium competitive sunt quod omnis mos velit, et id etiam quod tibi offerre possumus. Scilicet, etiam essentialis est perfecta post venditionesque servitium. Si interesse in nostra officia SiC Coated Barrel Susceptor, nunc nos consulere potes, in tempore respondebimus tibi!

VeTek Semiconductor SiC Coated Ferocactus Susceptor maxime usus est pro LPE Si EPI reactors.

LPE (Liquid Phase Epitaxy) Epitaxia pii est vulgo semiconductoris epitaxialis technicae incrementi usus ad tenues stratas deponendorum silicon-crystal pii in substratis. Incrementum liquidum-phase est methodus e chemica profectae in solutione ad incrementum cristallinae consequendum.

Principium principale epitaxy Pii LPE immergens substratum in solutionem materiae desideratae continentem, temperatura et solutionem compositionis moderans, materiam in solutione permittens crescendi sicut iacuit unus-crystal silicon in superficie subiecta. Accommodando condiciones et solutiones compositionis in incrementi epitaxialis incrementum, qualitatem crystalli desideratam, crassitudinem et intentionem doping posse obtineri.

LPE epitaxia Pii varias notas et utilitates praebet. Uno modo, potest fieri ad temperaturas relative humilis, reducendo accentus scelerisque et immunditiae diffusionis in materia. Secundo, LPE epitaxia pii praebet altam uniformitatem et qualitatem crystallinam optimam, aptam ad fabricandas machinas semiconductores summus perficientur. Accedit, LPE technicae artis incrementum dat complexorum structurarum, sicut multilayri et heterostructurae.

In LPE epitaxia Pii, in SiC Coated Ferocactus Susceptor crucialis est componentis epitaxialis. Solet solet tenere et sustentare substratum siliconis, quae requiruntur ad epitaxialem incrementum, dum temperatura et atmosphaeram temperantia praebens. SiC efficiens auget summus temperaturae durabilitas et chemicae susceptoris stabilitas, occurrens exigentiis processus incrementi epitaxialis. Utendo SiC Coated Ferocactus Susceptor, efficientia et constantia incrementi epitaxialis emendari potest, procurans incrementum summus qualitas epitaxial stratis.


Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3.21 g/cm³
duritia MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1



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Overview of the semiconductor chip epitaxy industry catena:


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