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SiC Coated Top Plate pro LPE PE2061S
  • SiC Coated Top Plate pro LPE PE2061SSiC Coated Top Plate pro LPE PE2061S
  • SiC Coated Top Plate pro LPE PE2061SSiC Coated Top Plate pro LPE PE2061S
  • SiC Coated Top Plate pro LPE PE2061SSiC Coated Top Plate pro LPE PE2061S

SiC Coated Top Plate pro LPE PE2061S

VeTek Semiconductor princeps SiC Coated Top Plate pro LPE PE2061S fabricator et innovator in China. Propria materia in SiC coating multos annos habemus. Offerimus SiC Coated Top Plate pro LPE PE2061S nominatim pro LPE silicon epitaxy reactor. Hoc SiC Coated Top Plate pro LPE PE2061S summum est simul cum dolio susceptor. Haec CVD SiC bractea iactat altam puritatem, optimam scelerisque stabilitatem, et uniformitatem, idoneam ad epitaxialem stratis crescendi qualitatem faciens. Gratamus te ut nostras officinas visites. apud Sinas.

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VeTek Semiconductor Sinarum SiC Coated Top Plate professio est pro fabrica et elit PE2061S LPE.

VeTeK Semiconductor SiC Coated Top Plate pro LPE PE2061S in apparatu epitaxiali siliconis, in coniunctione cum dolii speciei corporis susceptoris ad sustentationem et lagana epitaxialem (vel subiecta) durante processu epitaxiali.

SiC Coated Top Plate pro LPE PE2061S typice facta est materia graphite stabilis temperaturae stabilis. VeTek Semiconductor diligenter considerat factores ut coëfficientem expansionem scelerisque, cum materiam graphitam aptissimam eligendo, ut validum vinculum cum carbide silicone efficiat.

SiC Coated Top Plate pro LPE PE2061S praeclaram stabilitatem et chemicam resistentiam scelerisque ostendit ut summus temperatus et corrosivus ambitus in epitaxy incrementi sustineat. Hoc diuturnum firmitatem, fidem et lagana tutelam praestat.

In apparatu epitaxiali Pii, munus primarium reactoris totius CVD SiC coagulatum est lagana fulcire et superficiem aequalem subiectam praebere ad incrementum epitaxialium stratorum. Accedit, permittit adaptationem in positione et intentione lagani, faciliorem potestatem super temperantia et dynamica fluida in incrementi processu ad obtinendas condiciones incrementum et epitaxialem tabulatum notas desideratas.

VeTek semiconductoria producta altam praecisionem et crassitudinem efficiens aequalem offerunt. Incorporatio quiddam iacuit etiam producti temporis spatium. in apparatu epitaxiali pii, in coniunctione cum susceptore corporis dolii typo sustinendi et uncta epitaxial (vel subiecta) durante processu incrementi epitaxialis.


SEM data and structure of CVD SIC films


Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3.21 g/cm³
duritia MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1


VeTek Semiconductor Production Shop

VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry catena:

Overview of the semiconductor chip epitaxy industry chain


Hot Tags: SiC Coated Top Plate pro LPE PE2061S, China, Manufacturer, Supplier, Factory, Lorem, Eme, Provectus, Dura, Factus in Sinis
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