- English
- Español
- Português
- русский
- Français
- 日本語
- Deutsch
- tiếng Việt
- Italiano
- Nederlands
- ภาษาไทย
- Polski
- 한국어
- Svenska
- magyar
- Malay
- বাংলা ভাষার
- Dansk
- Suomi
- हिन्दी
- Pilipino
- Türkçe
- Gaeilge
- العربية
- Indonesia
- Norsk
- تمل
- český
- ελληνικά
- український
- Javanese
- فارسی
- தமிழ்
- తెలుగు
- नेपाली
- Burmese
- български
- ລາວ
- Latine
- Қазақша
- Euskal
- Azərbaycan
- Slovenský jazyk
- Македонски
- Lietuvos
- Eesti Keel
- Română
- Slovenski
- मराठी
- Srpski језик
Sinae Tantalum Carbide Coating fabrica, supplementum, Factory
VeTek semiconductor est primarius fabricae Tantali Carbide Coating materias semiconductoris industriae. Nostrae oblationes principales productae includunt partes CVD tantalum carbidam coating partes, sintedi TaC partes efficiens pro cristallo augmenti SiC vel epitaxiae semiconductoris. Transierunt ISO9001, VeTek Semiconductor bonam potestatem in qualitate habet. VeTek Semiconductor dicatus est ut innovator factus sit in Tantalum Carbide Coating industriam per permanentem inquisitionem et progressionem technologiarum iterativarum.
Pelagus products suntTaC Coated Guide Ring, CVD TaC iactaret tres petal dux anulus, Tantalum Carbide TaC Coated Halfmoon, CVD TaC coating planetarium SiC epitaxial susceptor, Tantalum Carbide Ring, Tantalum Carbide Coated Porous Graphite, TaC Coating Rotatione Susceptor, Tantalum Carbide Ring, TaC Coating Rotatione Plate, TaC iactaret laganum susceptor, TaC Coated Deflector Ring, CVD TaC Coating Cover, TaC Coated Chucketc., puritas est infra 5ppm, occurrere mos requisitis.
TaC graphite coating creatum est superficies graphitae altae puritatis substratae cum strato subtilissimo carbidi tantali per Depositionis Vaporis chemici proprietatis (CVD) processum. Commodum infra picturam ostenditur:
Tantalum carbide (TaC) efficiens attentionem consecuta est ob altitudinem eius liquescentis punctum usque ad 3880°C, excellentem roboris mechanicam, duritiem et resistentiam ad pulsuum thermarum, idque amabili modo ad compositiones semiconductoris epitaxy processuum cum temperatura superiori requisitis; ut Aixtron MOCVD systema et LPE SiC processum epitaxy. Etiam late patet in PVT methodo SiC processum cristallinum.
Key Features:
●Temperatus stabilitas
●Ultra alta munditia
●Resistentia ad H2, NH3, SiH4, Si
●Resistentia ad scelerisque stirpe
●Fortis adhaesio graphite
●Conformal coating coverage
● Magnitudo usque ad 750 mm diameter (Sola fabrica in Sinis hanc magnitudinem attingit)
Applications:
calefactio inductiva susceptor
calefactio elementum resistens
Calor scutum
Tantalum carbide (TaC) efficiens microscopic cross-sectioni:
Parameter VeTek Semiconductor Tantalum Carbide Coating:
| Corporalis proprietatibus TaC coating | |
| Densitas | 14.3 (g/cm³) |
| Imprimis emissivity | 0.3 |
| Scelerisque expansion coefficientes | 6.3 10-6/K |
| Duritia (HK) | 2000 HK |
| Resistentia | 1×10-5Ohm* cm |
| Scelerisque status | <2500℃ |
| Graphite magnitudine mutationes | -10~-20um |
| Crassitudo coating | ≥20um valorem typicum (35um±10um) |
TaC coating EDX data：
TaC efficiens crystal structuram data:
| Elementum | Cento atomicus | |||
| Pt. 1 | Pt. 2 | Pt. 3 | Mediocris | |
| C K | 52.10 | 57.41 | 52.37 | 53.96 |
| The M | 47.90 | 42.59 | 47.63 | 46.04 |
- View as
Pro professionalis Tantalum Carbide Coating fabrica et elit in Sinis, habemus officinam nostram. Utrum officia nativus ad proprias regionis tuae necessitates occurrere vel in Tantalum Carbide Coating in Sinis factas et longas emere voles, nuntium nobis relinquere potes.
