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Tantalum Carbide Coated tube ad Crystal Augmentum
  • Tantalum Carbide Coated tube ad Crystal AugmentumTantalum Carbide Coated tube ad Crystal Augmentum
  • Tantalum Carbide Coated tube ad Crystal AugmentumTantalum Carbide Coated tube ad Crystal Augmentum
  • Tantalum Carbide Coated tube ad Crystal AugmentumTantalum Carbide Coated tube ad Crystal Augmentum
  • Tantalum Carbide Coated tube ad Crystal AugmentumTantalum Carbide Coated tube ad Crystal Augmentum

Tantalum Carbide Coated tube ad Crystal Augmentum

VeTek Semiconductor est Tantalum Carbide Coated Tube ducens pro Crystal Incremento opificem et innovatorem in China. Specializati sumus in ceramic tunica per multos annos. Producta nostra altam puritatem et caliditatem resistentiae habent. Expectamus ut diuturnum tempus socium tuum fieri expectamus. apud Sinas.

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Scias quiescere potes Tantalum Carbide Coated tube ad Crystal Incrementum a VeTek Semiconductor emere. Expectamus cooperantem tibi, si plura scire vis, modo consulere potes, respondebimus tibi in tempore!

VeTek Semiconductor Tantalum Carbide Coated tube offert pro Crystal Incrementum specifice designatum pro crystallo SiC augmenti utendi methodum Physicam Vapor Transport (PVT). VeTek Semiconductoris tubi graphitici summus puritas cum CVD tantalum carbide efficiens inducit, ut optimam observantiam in crystalli SiC augmento obtineat. Crystalla SiC, quae semiconductores generationis tertiae notae sunt, immensam potentiam in variis applicationibus tenent. Utendo nostro Tantalum Carbide Tubus Coated ad Crystal Incrementum, investigatores et industria professionales efficaciter possunt optimize incrementum SiC et producere qualitatem altae SiC crystalli boules. Sive in investigationis sive productionis industriae implicatis, fructus nostri certas solutiones ad incrementum SiC crystalli efficientis praebent.

Praeter TaC obductis graphite tubum, VeTek Semiconductor etiam anulos TaC obductis, TaC uasculum obductis, TaC graphitum porosum obductis, TaC graphitum susceptorem obductis, TaC ductorem anulum obductis, TaC Tantalum Carbide obductis lammina, TaC Orbis Coating, TaC graphiten coating operculum, TaC obductis. FRUSTUM pro crystallo incrementum fornacem sicut infra;



PVT methodo Sic Crystal Incrementum


Tantalum Carbide Product parametri Tubus ad Crystal Augmentum Coated

Corporalis proprietatibus TaC coating
Density 14.3 (g/cm³)
Imprimis emissivity 0.3
Scelerisque expansion coefficientes 6.3 10-6/K
Duritia (HK) 2000 HK
Resistentia 1×10-5 Ohm*cm
Scelerisque status <2500℃
Graphite magnitudine mutationes -10~-20um
Crassitudo coating ≥20um valorem typicum (35um±10um)


Azymum effectus post compositiones nostras utendo:


VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry catena:


Hot Tags: Tantalum Carbide Coated tube ad Crystal Incrementum, China, Manufacturer, Supplier, Factory, Lorem, Eme, Provectus, Dura, Factus in Sinis
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