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TaC Coating Planetary Susceptor
  • TaC Coating Planetary SusceptorTaC Coating Planetary Susceptor

TaC Coating Planetary Susceptor

VeTek Semiconductor'TaC Coating Planetarium Susceptor productum est eximium pro apparatu epitaxy Aixtron. Robustus TaC coating excellentem summus temperatura resistentiam et inertness chemicam praebet. Haec unica coniunctio certam obtinet vitam ac diuturnam servitutem, etiam in ambitus exigendo. VeTek committitur ut producta summus qualitas praebeat et serviat ad longum tempus socium in mercatu Sinensi cum Morbi cursus auctor.

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In regione fabricationis semiconductoris, TaC Coating Planetariae Susceptor munus magnum gerit. In stratis epitaxialibus in apparatu systematis Aixtron G5 late adhibitum est incrementum carbide pii (SiC). Praeterea, cum in tantalum carbide (TaC) depositionis coatingis depositio pro epitaxy SiC, tamquam orbis exterioris usus est, TaC Coating Planetaria Susceptor essentialem sustentationem et stabilitatem praebet. Uniformem depositionem in strato tantalum carbidi efficit, formationi praecipuorum qualitatum epitaxialium stratorum cum morphologiae superficie excellenti et crassitudine cinematographici desideratae confert. TaC inertia chemica inertia efficiens impedit motus et contagione inutiles, integritatem epitaxialium stratorum servans et qualitatem superiorem praestans.

TaC coating's eximiae scelerisque conductivity dat calorem efficientem translationem, aequabilem temperaturam distributionem promovere et lacus scelerisque minimis in processu epitaxiali incrementi. Hoc consequitur productionem summus qualitas SiC epitaxialis stratis cum melioribus proprietatibus crystallographicis et electrica conductivity auctus.

Praecisae dimensiones et robustae constructionis orbis Planetariae TaC Coating facilem reddunt in systemata exsistentia, inconsutilem compatibilitatem et operationem efficientem procurantes. Eius effectus certa et summus qualitas TaC efficiens conferunt ad constantes et uniformes eventus in processibus epitaxy SiC.

Fiducia VeTek Semiconductor nosterque Orbis Planetarius TaC Coating propter eximiam observantiam et constantiam in epitaxy SiC. Experiamur commoda solutionum novarum nostrarum, ponens te in fronte progressionum technologicarum in industria semiconductoris.


TaC litura et SiC litura parce partes supplemus;


Product parametri TaC Coating Planetariae Susceptor:

Corporalis proprietatibus TaC coating
Density 14.3 (g/cm³)
Imprimis emissivity 0.3
Scelerisque expansion coefficientes 6.3 10-6/K
Duritia (HK) 2000 HK
Resistentia 1×10-5 Ohm*cm
Scelerisque status <2500℃
Graphite magnitudine mutationes -10~-20um
Crassitudo coating ≥20um valorem typicum (35um±10um)


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