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Sic Coating Collector Center
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  • Sic Coating Collector CenterSic Coating Collector Center

Sic Coating Collector Center

VeTek Semiconductor, opifex honestus CVD SiC fabricans, tibi incisuras SiC Coating Collector Centrum in systemate Aixtron G5 MOCVD affert. Hae SiC Coating Collector Centrum adamussim designantur cum graphite puritate alta et gloriantur provecta CVD SiC coating, procurans caliditas stabilitatem, corrosionem resistentiam, puritatem altam. Prospiciens ad cooperandum tecum!

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VeTek Semiconductor SiC Coating Collector Centrum partes magni momenti agit in processu Semiconducor EPI processu. Una est e elementis praecipuis adhibitis pro distributione gasi et temperantia in reactione epitaxiali camerae. Gratum est nos inquirere de tunica SiC et TaC in fabrica nostra.

Munus Collectoris Coating SiC Centri hoc modo est:

Distributio gas: SiC Coating Collector Centrum varios gasorum in cameram epitaxialem reactionem inducere adhibetur. Plures sinus et exitus habet qui diversos vapores in locis desideratis distribuere possunt ad peculiares necessitates incrementi epitaxialis occurrere.

Gas control: SiC Coating Collector Centrum subtilis cuiusque gasi per valvulas imperium ac cogitationes fluere ac moderari consequitur. Haec definitio gasi moderatio essentialis est pro successu incrementi epitaxialis ad obtinendum ratem intentionem gasi desideratam et fluunt, ut qualitatem et constantiam cinematographici procurans.

Uniformitas: Consilium et layout centralis gasi colligendi anulum adiuvat ad obtinendum gasi distributionem uniformem. Per rationabilem gasi fluunt viam et modum distributionis, gas aequaliter miscetur in thalamo epitaxiali reactionis, ut cinematographicum uniforme incrementum consequatur.

In fabrica productorum epitaxialium, SiC Coating Collector Centrum partes praecipuas agit in qualitate, crassitudine et uniformitate cinematographici. Per distributionem gas propriam et potestatem, Centrum Coating Collector SiC stabilitatem ac constantiam processus incrementi epitaxialis efficere potest, ut cinematographica nobilitas epitaxialis obtineat.

Comparatur ad centrum graphite collectori, SiC Coated Collector Centrum emendatur conductivity scelerisque, inertia chemica aucta et resistentia superior corrosio. Silicon carbida efficiens signanter auget scelerisque administrationem capacitatem materiae graphitae, ducens ad meliorem temperaturam uniformitatem et constantem incrementum movendi in processibus epitaxialibus. Accedit, litura tutelae stratum praebet repugnantem corrosioni chemicae, expansionem vitae graphite- rum partium. Super, materia graphitica carbide-silicon iactata praebet superiorem conductivity scelerisque, chemicae inertiae, et corrosionis resistentiae, stabilitatem auctam ac GENERALIS cinematographici in processibus epitaxialibus procurando.


Basicae physicae proprietates CVD SiC efficiens:

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3.21 g/cm³
duritia MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1


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