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Silicon-based GaN Epitaxial Susceptor
  • Silicon-based GaN Epitaxial SusceptorSilicon-based GaN Epitaxial Susceptor
  • Silicon-based GaN Epitaxial SusceptorSilicon-based GaN Epitaxial Susceptor
  • Silicon-based GaN Epitaxial SusceptorSilicon-based GaN Epitaxial Susceptor

Silicon-based GaN Epitaxial Susceptor

VeTek Semiconductor est fabrica et supplementum professionalis, dicatum ad comparandum qualitatem silicon-substructam GaN epitaxialem Susceptorem. Susceptus semiconductor in VEECO K465i GaN MOCVD ratio adhibetur, puritas alta, resistentia caliditas, resistentia corrosio, grata quaerendi et cooperandi nobiscum!

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VeTek Semiconducto princeps professionalis Sinarum Silicon-substructio gaN epitaxial Susceptoris opificem cum magno qualitate et rationabili pretio. Welcome to contact us.

VeTek Semiconductor Silicon-substructus GaN Susceptor Epitaxialis est susceptor Silicon-substructus GaN Epitaxialis clavis est componentis in VEECO K465i GaN MOCVD systema sustentandi et calefacere Substratum Silicon materiae GaN in incrementi epitaxialis.

VeTek Semiconductor Pii-substructus GaN Susceptor Epitaxialis altam puritatem et altam qualitatem materiae graphite substratae adoptat, quae bonam stabilitatem et calorem conductionem habet in processu incrementi epitaxiali. Subiectum hic ambitus caliditatis sustinere potest, ad stabilitatem et constantiam processus incrementi epitaxialis procurans.

Ut efficientiam et qualitatem incrementi epitaxialis emendaret, superficies huius susceptoris vestitur ad usus summus puritatis et summus carbide Pii uniformitas. Silicon carbide efficiens optimam caliditatem resistentiae et stabilitatis chemicae habet, et efficaciter resistere potest reactioni chemicae et corrosioni in processu incrementi epitaxialis.

Consilium et materia lectio huius lagani susceptoris ordinantur ad optimas scelerisque conductivity, chemicae stabilitatis et mechanicae virium ad altam qualitatem GaN epitaxy incrementum sustinendum. Excelsa eius puritas et summa uniformitas efficit constantiam et uniformitatem in incremento, unde in GENERALI GENERALI GENERALIS.

In genere, silicon-substructio susceptoris GaN Epitaxialis est summus effectus productus in specie designatus ad VEECO K465i GaN MOCVD systema utendo altam puritatem, altam qualitatem graphte subiectam et altam puritatem, altam uniformitatem carbidam pii vestiturae. Firmitatem, constantiam et qualitatem altitudinis fulcimentum praebet pro processu incrementi epitaxialis.


Corporalis proprietatibus graphite isostatic
Property Unitas Typical Value
Mole densitas g/cm³ 1.83
duritia HSD 58
Resistivity electrica mΩ.m 10
Flexurae Fortitudo MPa 47
Compressive fortitudo MPa 103
Distrahentes fortitudo MPa 31
Modulus GPa 11.8
Scelerisque Expansion (CTE) 10-6K-1 4.6
Scelerisque conductivity W·m-1·K-1 130
Mediocris Frumenti Location μm 8-10
Porosity % 10
Cinis Content ppm ≤10 (purgatus)


Silicon-based GaN Epitaxial Susceptor Physica Properties;

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3.21 g/cm³
duritia MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1

Nota: Priusquam tunicam, primam purificationem, post vestitionem, secundam purificationem faciemus.


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