Sinae Firmus Silicon Carbide fabrica, supplementum, Factory

VeTek Semiconductor solidus Silicon Carbide magni ponderis est in plasma etching apparatu ceramico, carbide solidi pii (CVD pii carbide) Partes in apparatu includit etchingfocusing annulos, gas stillhead, lance, marginem annuli etc. Ob reactivitatem et conductivity solidi carbidi pii (CVD carbidi pii) ad vapores chlorinum - et fluorinum continentem etching vapores, est materia idealis pro plasma etching instrumento anulorum et aliorum. tium.

Verbi gratia, anulus focus est pars magna extra laganum posita et directa cum lagano, applicando anuli intentionem ad umbilicum plasma transeunte per anulum, ita ut plasma laganum ad meliorem uniformitatem ponat. expediendas. Anulus focus traditum e Pii or . e factus estvicus, proxumum silicon ut anulus communis materiae, prope ad conductivity siliconis lagani est, sed inopia est pauper etching resistentia in plasmate fluorino-continente, machinae partes materiae saepe adhibitae ad tempus, graves erunt. phaenomenon corrosio, graviter reducendo efficientiam suam efficiendi.

Solid SiC Focus RingPrincipium opus：

Working Principle of Solid SiC Focus Ring

Comparison of Si Based Ring Focusing and CVD SiC Focusing Ring

Comparison of Si Based Ring Focusing and CVD SiC Focusing Ring
Item	And	CVD SiC
Densitas (g / cm³)	2.33	3.21
Cohors gap (eV)	1.12	2.3
Scelerisque conductivity (W/cm℃)	1.5	5
CTE (x10^-6/℃)	2.6	4
Modulus elasticus (GPa)	150	440
Duritia (GPA)	11.4	24.5
Resistentia ad induendum et corrosio	Pauper	Praeclarus

VeTek Semiconductor offert carbidam silicon solidam (CVD carbidam pii) partes quasi SiC annulos pro instrumento semiconductoris positos. Pii carbide solidi nostri anulos positos outperformes silicones tradito in terminis vi mechanica, resistentia chemica, conductivity scelerisque, durabilitas summus temperatura, et resistentia Ion engraving.

Clavis notarum nostrarum SiC annulorum focusing includit:

Maximum densum ad reducta engraving rates.

Nulla magna cum bandgap.

Princeps scelerisque conductivity et humilis coefficiens expansionem scelerisque.

Superior impactio mechanica resistentia et elasticitas.

Alta duritia, resistentia, et corrosio resistentia.

Product perplasma depositionis vaporis chemica amplificatus (PECVD)technicis artibus, nostris SiC annulis positivis occurrentibus crebrescentibus postulationibus etingendi processuum in fabricandis semiconductoribus. Ordinantur ad altiorem plasmatis vim et industriam sustinere, specie incapacitively plasma copulatum (CCP)disciplinas.

VeTek Semiconductor's SiC anulos positos praebent eximiam observantiam et constantiam in fabrica fabricandis semiconductoris. Nostrum Sic partes pro superiori qualitate et efficacia elige.

View as

<1 2 >

Pro professionalis Firmus Silicon Carbide fabrica et elit in Sinis, habemus officinam nostram. Utrum officia nativus ad proprias regionis tuae necessitates occurrere vel in Firmus Silicon Carbide in Sinis factas et longas emere voles, nuntium nobis relinquere potes.